Single-Event Effects Sensitivity Analysis of a 0.18um CMOS Low-Noise Amplifier

Title: Single-Event Effects Sensitivity Analysis of a 0.18um CMOS Low-Noise Amplifier
Authors: M. San Miguel-Montesdeoca, S. Mateos-Angulo, D. Mayor-Duarte, S.L. Khemchandani and J. del Pino
Conference name: Design of Circuits and Integrated Systems Conference XXXI

Abstract: This paper investigates Single Event Effects (SEE) in a 0.18 μm CMOS 2.4 GHz Low Noise Amplifier (LNA). The recovery time and maximum output voltage peak were analysed when an energetic particle strikes the most critical nodes of the circuit. This study facilitates the understanding of transient propagation in LNAs and suggests several radiation hardening approaches to reduce SEE sensitivity at transistor level.

Esta entrada fue publicada en 2016, Conference Papers, dmayor, jpino, mario, smateos, sunil. Guarda el enlace permanente.