Title: Design of a Fully Integrated DC to 8.5 GHz Distributed Amplifier in CMOS 0.35
Authors: G. Martín, R. Diaz, J. del Pino, S. L. Khemchandani, A. Goñi, A. Hernández
Conference name: XXI Design of Integrated Circuits and Systems Conference
Abstract:
A fully-integrated Distributed Amplifier was implemented in a standard 0.35 μm CMOS process up to 10 dB of gain and a bandwidth of 8.6 GHz. Octagonal inductors with no ground shield were implemented in top available metal. Design guidelines for optimizing amplifier gain are presented. Chip dimensions are 0.75 × 1 mm2 and power dissipation is 107 mW, drawn from a 3.3 V supply.